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| MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M63992FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES FLOATING SUPPLY VOLTAGE ................................. 600V OUTPUT CURRENT .................................................... 2A HALF BRIDGE DRIVER SOP-16 APPLICATIONS PDP. HID lamp. MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. LO 1 GND 2 16 15 14 13 12 11 10 9 NC GND LIN NC HIN VDD NC NC VCC 3 NC 4 M63992FP NC 5 VS 6 VB 7 HO 8 NC:NO CONNECTION PACKAGE TYPE 16P2N BLOCK DIAGRAM VB UV DETECT FILTER VDD HV LEVEL SHIFT R Q R INTER LOCK HO HIN VDD/ VCC LEVEL SHIFT S PULSE GEN VS VCC UV DETECT FILTER R Q LO LIN DELAY S GND GND Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VB VS VHO VCC VLO VDD VIN dVS/dt Rth(j-c) Pt Kq Tj Topr Tstg Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient Junction-Case Thermal Resistance Package Power Dissipation Linear Derating Factor Junction Temperature Operation Temperature Storage Temperature HIN, LIN Conditions Ratings -0.5~624 VB-24 ~ VB+0.5 VS-0.5 ~ VB+0.5 -0.5 ~ 24 -0.5 ~ VCC+0.5 -0.5 ~ 7 -0.5 ~ VDD+0.5 50 50 Ta = 25C, On Board Ta > 25C, On Board 1.1 11 -20 ~ 125 -20 ~ 75 -40 ~ 125 Unit V V V V V V V V/ns C/W W mW/C C C C RECOMMENDED OPERATING CONDITIONS Symbol VB VS VCC VDD VIN Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Voltage Low Side Fixed Supply Voltage Logic Supply Voltage Logic Input Voltage HIN, LIN Test Conditions Min. VS+13.5 -5 13.5 4.5 0 Limits Typ. -- -- -- -- -- Max. VS+20 500 20 5.5 VDD Unit V V V V V FUNCTION TABLE HIN L L H H X ! L H LIN L H L H L H X ! VBS UV H H H H L L H H VCC UV H H H H H H L L HO L L H L L L L (Note) H(Note) LO L H L L L H L L LO = OFF, HO = OFF LO = ON, HO = OFF LO = OFF, HO = ON LO = OFF, HO = OFF, LIN = HIN = H simultaneously LO = OFF, HO = OFF, VBS UV tripped LO = ON, HO = OFF, VBS UV tripped LO = OFF, HO = OFF, VCC UV tripped LO = OFF, HO = ON, VCC UV tripped Behavioral state Note : "L" state of VBS UV and VCC UV mean that UV trip voltage. Even VCC UV is tripped, HO state is not changed. When VCC is lower than UV trip voltage, HIN state can not be propagated to HO. Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25C, VCC=VBS=15V, VDD=5V unless otherwise specified) Symbol IFS IBS ICC IDD VOH VOL VIH VIL IIH IIL VBSUVT VBSUVR tVBSUV VCCUVT VCCUVR tVCCUV IOH IOL ROH ROL tdLH(HO) tdHL(HO) tr(HO) tf(HO) tdLH(LO) tdHL(LO) tr(LO) tf(LO) tdMon tdMoff Parameter Floating Supply Leakage Current VBS standby Current VCC standby Current VDD standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Trip Voltage VBS Supply UV Reset Voltage VBS Supply UV Filter Time VCC Supply UV Trip Voltage VCC Supply UV Reset Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On resistance Output Low Level On resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off VO=0V, VIN=5V, PW<10s VO=15V, VIN=0V, PW<10s IO=-200mA, ROH=(VOH-VO)/IO IO=200mA, ROL=VO/IO CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between HO - VS CL=1000pF between LO - GND CL=1000pF between LO - GND CL=1000pF between LO - GND CL=1000pF between LO - GND |tdLH(HO)-tdLH(LO)| |tdHL(HO)-tdHL(LO)| IO=0A, LO, HO IO=0A, LO, HO HIN, LIN HIN, LIN VIN=5V VIN=0V Test conditions VB=VS=600V Min. -- 0.2 0.2 -- 13.8 -- 2.1 0.6 -- -- 9.5 10.0 -- 9.5 10.0 -- -- -- -- -- 250 230 -- -- 250 230 -- -- -- -- Limits Typ. -- 0.5 0.5 -- 14.4 -- 3.0 1.5 25 -- 10.5 11.0 7.5 10.5 11.0 7.5 -2.5 2.5 10 2.5 300 280 20 15 300 280 20 15 -- -- Max. 1.0 1.0 1.0 100 -- 0.1 4.0 1.9 75 1.0 11.5 12.0 -- 11.5 12.0 -- -- -- 13 3.0 350 330 30 25 350 330 30 25 30 30 Unit A mA mA A V V V V A A V V s V V s A A ns ns ns ns ns ns ns ns ns ns Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER LEAD DEFINITIONS Lead symbol LO GND VCC VS VB HO VDD HIN LIN Description Low side gate drive output Ground Low side supply High side floating supply (minus side) High side floating supply (plus side) High side gate drive output Logic supply Logic input for high side gate driver output (HO) Logic input for low side gate driver output (LO) TIMING DIAGRAM 1. Input/Output Timing Diagram HIN LIN HO LO 2. VCC(VBS) Supply Undervoltage Lockout Timing Diagram VCC (VBS) VCCUVR (VBSUVR) VCCUVT (VBSUVT) tVCCU (tVBSUV) LO (HO) LIN (HIN) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER PERFORMANCE CURVES IFS vs. Temperature 10 9 8 7 5 4 3 2 1 0 -1 -20 0 25 50 Ta (C) 75 100 125 0.3 0.2 -20 0 IBS (mA) 6 IFS (A) 0.8 0.7 0.6 0.5 0.4 1.0 0.9 IBS vs. Temperature 25 50 Ta (C) 75 100 125 VIH, VIL vs. Temperature 4.0 3.5 3.0 VIH VIH, VIL (V) 2.0 1.5 1.0 0.5 0.0 -20 0 25 50 Ta (C) 75 100 125 VIL ICC (mA) 2.5 0.7 0.6 0.5 0.4 0.3 0.2 -20 0 1.0 0.9 0.8 ICC vs. Temperature 25 50 Ta (C) 75 100 125 UVT, UVR vs. Temperature 12.0 30 25 20 IIH (A) 15 10 10.0 9.5 -20 5 0 -20 IIH vs. Temperature 11.5 UVT, UVR (V) UVR UVT 11.0 10.5 0 25 50 Ta (C) 75 100 125 0 25 50 Ta (C) 75 100 125 Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER IOH, IOL vs. Temperature 4.0 3.5 3.0 IOH, IOL (A) IOH, IOL (A) IOH, IOL vs. Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2.5 2.0 1.5 1.0 0.5 0.0 -20 0 25 50 Ta (C) 75 100 125 0.0 13 14 15 16 17 18 19 20 VB, VCC (V) ROL vs. Temperature 3.5 3.0 2.5 ROL () ROL vs. Voltage 3.0 2.8 2.5 ROL () 2.0 1.5 1.0 0.5 0.0 -20 0 25 50 Ta (C) 75 100 125 2.3 2.0 1.8 1.5 13 14 15 16 17 18 19 20 VB, VCC (V) ROH vs. Temperature 13.0 13.00 ROH vs. Voltage 11.0 ROH () ROH () 11.00 9.0 9.00 7.0 7.00 5.0 -20 0 25 50 75 100 125 150 5.00 13 14 15 16 17 18 19 20 Ta (C) VB, VCC (V) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER tdLH, tdHL vs. Temperature 450 400 tdLH, tdHL vs. Voltage 400 350 tdLH, tdHL (ns) tdLH, tdHL (ns) 350 tdLH (HO) tdLH (LO) tdHL (HO) tdHL (LO) 300 tdLH (HO) tdLH (LO) 300 250 250 tdHL (HO) tdHL (LO) 200 -20 0 25 50 Ta (C) 75 100 125 200 13 14 15 16 17 18 19 20 VB, VCC (V) Power Loss vs. Frequency 10000 VS=400V VS=300V 1000 1000 Power Loss vs. Frequency (HV=0V) CL=10000pF Power Loss (mW) Power Loss (mW) 100 CL=1000pF CL=0pF 10 100 VS=200V VS=100V 10 VB=VCC=15V, VDD=5V, CL=1000pF 1 10 100 Frequency (kHz) 1000 VB=VCC=15V, VDD=5V 1 10 100 Frequency (kHz) 1000 Thermal Derating Factor Characteristics 2.0 Power Dissipation Pt(W) 1.5 1.0 0.5 0 0 25 50 75 100 125 Ambient Temperature Ta (C) Sep. 2000 MITSUBISHI SEMICONDUCTORS M63992FP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE 16P2N-A EIAJ Package Code SOP16-P-300-1.27 JEDEC Code - Weight(g) 0.2 Lead Material Cu Alloy Plastic 16pin 300mil SOP e b2 16 9 HE E e1 Recommended Mount Pad Symbol A D A2 A1 A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters Min Nom Max - - 2.1 0 0.1 0.2 - - 1.8 0.5 0.35 0.4 0.25 0.2 0.18 10.2 10.1 10.0 5.4 5.3 5.2 1.27 - - 7.8 8.1 7.5 0.6 0.8 0.4 - 1.25 - 0.1 - - 0 - 8 - 0.76 - - 7.62 - - 1.27 - 1 8 F b e y L1 c Detail F L I2 Sep. 2000 |
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